Effect of work-function of contacting metal on metal-molecules-silicon junctions

Materials Chemistry and Physics

Volumn 124, Issue 2-3, 2010, Pages 1121-1125

  Hiremath, R K ^a   Rabinal, M K ^a   Mulimani, B G ^a  

^a KARNATAK UNIVERSITY   (India)

Author keywords

Barrier height; Dipole moment; Molecular junctions; Schottky junctions; Work function

Indexed keywords

BARRIER HEIGHTS; CHARGE TRANSPORT PROPERTIES; CONTACTING METALS; CURRENT-VOLTAGE MEASUREMENTS; JUNCTION BARRIER; METAL WORKS; MOLECULAR JUNCTION; SCHOTTKY; SCHOTTKY BEHAVIORS; SCHOTTKY JUNCTIONS; SILICON JUNCTION; SILICON SURFACES; TEMPERATURE-DEPENDENT CHANGES; WORK-FUNCTION DIFFERENCE;

ALUMINUM; DIPOLE MOMENT; ELECTRIC DIPOLE MOMENTS; METALS; MOLECULES; SILICON; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957834503     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.08.045     Document Type: Article

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