Effect of oxidizing atmosphere on ferroelectric and piezoelectric response of CaBi2Nb2O9 thin films

Materials Chemistry and Physics

Volumn 124, Issue 2-3, 2010, Pages 894-899

  Simoes A Z ^c   Aguiar, E C ^a   Riccardi, C S ^a   Longo, E ^a   Varela, J A ^a   Mizaikoff, B ^b  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

Author keywords

Annealing; Chemical synthesis; Ferroelectricity; Thin films

Indexed keywords

AMBIENT CONDITIONS; APPLIED ELECTRIC FIELD; ATMOSPHERIC CONDITIONS; CHEMICAL SYNTHESIS; ELECTRICAL MEASUREMENT; FERROELECTRIC PROPERTY; LEAD-FREE PIEZOELECTRICS; MICROELECTROMECHANICAL SYSTEMS; NIOBATES; OXIDIZING ATMOSPHERE; OXYGEN ATMOSPHERE; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC RESPONSE; POLYMERIC PRECURSOR METHODS; RETENTION TIME; SI(1 0 0); STEADY-STATE VALUES; SWITCHABLE POLARIZATION; XRD;

ANNEALING; BISMUTH; DOMAIN WALLS; ELECTRIC FIELDS; FERROELECTRICITY; MICROELECTROMECHANICAL DEVICES; NIOBIUM COMPOUNDS; OXYGEN; PIEZOELECTRICITY; PLATINUM; SYNTHESIS (CHEMICAL); THIN FILMS; VAPOR DEPOSITION;

POLYMERIC FILMS;

EID: 77957834146     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.08.059     Document Type: Review

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