Impact of oxygen atmosphere on piezoelectric properties of CaBi2Nb2O9 thin films

Acta Materialia

Volumn 55, Issue 14, 2007, Pages 4707-4712

  Simoes A Z ^a   Riccardi, C S ^c   Cavalcante, L S ^b   Longo, E ^a   Varela, J A ^a   Mizaikoff, B ^c  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

CaBi2Nb2O9; Piezoelectricity; Point defects; Vacancies; X ray photoelectron spectroscopy

Indexed keywords

PIEZOELECTRIC COEFFICIENTS; POLYMERIC PRECURSORS;

CALCIUM COMPOUNDS; CRYSTALLIZATION; OXYGEN; PIEZOELECTRICITY; POINT DEFECTS; SILICON; SURFACE MORPHOLOGY; VACANCIES;

THIN FILMS;

EID: 34447295622     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2007.04.030     Document Type: Article

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