Modeling of depolarization in ferroelectric thin films

Integrated Ferroelectrics

Volumn 23, Issue 1, 1999, Pages 45-64

  Sun, Shan ^a,b   Fuierer, Paul A ^a  

^a NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

^b Ramtron International Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRICITY; HYSTERESIS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; REMANENCE; THIN FILMS;

ASYMMETRIC RETENTION; DEPOLARIZATION EFFECT; FERROELECTRIC POLARIZATION; FERROELECTRIC THIN FILMS; INTERNAL BIAS FIELD;

FERROELECTRIC MATERIALS;

EID: 0033296404     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908210139     Document Type: Article

References (23)

1. Pan, W., Sun, S. and Fuierer, P. A. (1993). J. Appl. Phys., 74(2), 1256.
2. Mihara, T., Watanabe, H. and Araujo, C. A. P. D. (1993). Jpn. J. Appl. Phys., 32, 4168.
3. Lee, J., Ramesh, R. and Keramidas, V. G. (1995). In: Ferroelectric Thin Films IV, Mat. Res. Soc. Symp. Proc., 361, 67.
4. Dimos, D., Warren, W. L., Sinclair, M. B., Tuttle, B. A. and Schwartz, R. W. (1994). J. Appl. Phys., 76, 4305.
5. Pike, G. E., Warren, W. L., Dimos, D., Tuttle, B. A., Ramesh, R., Lee, J., Keramidas, V. G. and Evans, J. T. Jr. (1995). Appl. Phys. Lett., 66, 484.
6. Chen, X., Kingon, A. I., Al-shreef, H. and Bellur, K. R. (1994). Ferroelectrics, 151, 133.
7. Sun, S., Wang, Y., Fuierer, P. A. and Tuttle, B. A. (1998). Submitted to Ferroelectrics.
8. Schwartz, R. W., Assink, R. A. and Headley, T. J. (1992). In: Ferroelectric Thin Films II, Mat. Res. Soc. Symp. Proc., 243, 245.
9. Tuttle, B. A., Schwartz, R. W., Doughty, D. H. and Voigt, J. A. (1990). In: Ferroelectric Thin Films, Mat. Res. Soc. Symp. Proc., 200, 159.
10. Tuttle, B. A., Voigt, J. A. and Goodnow, D. C. (1993). J. Am. Ceram. Soc., 76(6), 1537.
11. Sun, S., Liu, L. and Fuierer, P. A. (1994). Ferroelectrics, 152, 187.
12. Abt, N. E. (1991). In: Proc. of 3rd Int. Symp. on Integrated Ferroelectrics, Colorado Springs, Colorado, p. 404.
13. Benedetto, J. M., Moore, R. A. and Mclean, F. B. (1991). In: Proc. of 3rd Int. Symp. on Integrated Ferroelectrics, Colorado Springs, Colorado, p. 44.
14. Mehta, R. R., Silverman, B. D. and Jacobs, J. T. (1973). J. Appl. Phys., 44, 3379.
15. Eatough, M. O., Goebner, R. P. and Tuttle, B. A. (1992). In: Proceedings of the 94th Annual Amer. Cer. Soc. Meeting, Electronics Division.
16. Sun, S., Ph. D. Thesis, New Mexico Tech., 1997.
17. Tuttle, B. A., Voigt, J. A., Garino, T. J., Goodnow, D. C., Schwartz, R. W., Lamppa, D. L., Headley, T. J. and Eatough, M. O. (1992). In: Proc. of IEEE 8th Int. Symp. on Appl. of Ferroelectrics.
18. Hench, L. L. and West, J. K. (1990). Principles of Electronic Ceramics, p. 139, John Wiley & Sons, New York.
19. Hummel, R. E. (1992). Electronic Properties of Materials, 2nd edition, p. 183, Springer-Verlag, New York.
20. Fridkin, V. M. (1980). Ferroelectric Semiconductors, Ch. 3, Consultants Bureau, Plenum press, New York.
21. Brody, P. S. and Rod, B. J. (1993). Integrated Ferroelectrics, 3, 245.
22. Jenovec, V. (1959). Czech. J. Phys., 9, 468.
23. Lines, M. E. and Glass, A. M. (1977). Principles and Applications of Ferroelectrics and Related Materials, pp. 63-81 and p. 123, Clarendon Press, Oxford.