Electronic structure of wurtzite quantum dots with cylindrical symmetry

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Voon, L C Lew Yan ^a   Galeriu, C ^b   Lassen, B ^c   Willatzen, M ^c   Melnik, R ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b Life Science and Bioengineering Center   (United States)

^c UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SATURATION; TRANSITION METAL SILICIDES; WAFER CURVATURE MEASUREMENT; WURTZITE QUANTUM DOTS;

COMPUTER SIMULATION; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RESIDUAL STRESSES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 23744444264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2000329     Document Type: Article

References (29)

1. L. C. Lew Yan Voon, M. Willatzen, M. Cardona, and N. E. Christensen, Phys. Rev. B 53, 10703 (1996).
2. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode (Springer, New York, 2000).
3. J. Hu, L. Li, W. Yang, L. Manna, L. Wang, and A. P. Alivisatos, Science 292, 2060 (2001).
4. L. Li, J. Hu, W. Yang, and A. P. Alivisatos, Nano Lett. 1, 349 (2001).
5. D. Katz, T. Wizansky, O. Millo, E. Rothenberg, T. Mokari, and U. Banin, Phys. Rev. Lett. 89, 086801 (2002).
6. Y. Wang, L. Zhang, C. Liang, G. Wang, and X. Peng, Chem. Phys. Lett. 357, 314 (2002).
7. Z. R. Tian, J. A. Voigt, J. Liu, B. McKenzie, M. J. McDermott, M. A. Rodriguez, H. Konishi, and H. Xu, Nat. Mater. 2, 821 (2003).
8. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
9. Q. L. Liu, T. Tanaka, J. Q. Hu, F. F. Xu, and T. Sekiguchi, Appl. Phys. Lett. 83, 4939 (2003).
10. J. C. Johnson, H. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, Nat. Mater. 1, 106 (2002).
11. E. I. Rashba, Sov. Phys. Solid State 1, 368 (1959).
12. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1975).
13. J.-B. Jeon, Y. M. Sirenko, K. W. Kim, M. A. Littlejohn, and M. A. Stroscio, Solid State Commun. 99, 423 (1996).
14. S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996).
15. F. Mireles and S. E. Ulloa, Phys. Rev. B 60, 13659 (1999).
16. M. G. Burt, J. Phys.: Condens. Matter 4, 6651 (1992).
17. B. A. Foreman, Phys. Rev. B 56, R12748 (1997).
18. S. L. Chuang and C. S. Chang, Semicond. Sci. Technol. 12, 252 (1997).
19. A. D. Andreev and E. P. OReilly, Phys. Rev. B 62, 15851 (2000).
20. K. J. Vahala and P. C. Sercel, Phys. Rev. Lett. 65, 239 (1990).
21. P. C. Sercel and K. J. Vahala, Phys. Rev. B 42, 3690 (1990).
22. J. Planelles, W. Jaskólski, and J. I. Aliaga, Phys. Rev. B 65, 033306 (2002).
23. F. B. Pedersen and Y.-C. Chang, Phys. Rev. B 53, 1507 (1996).
24. X. Duan and C. M. Lieber, Adv. Mater. (Weinheim, Ger.) 12, 298 (2000).
25. V. A. Fonoberov and A. A. Balandin, J. Appl. Phys. 94, 7178 (2003).
26. X.-Z. Li and J.-B. Xia, Phys. Rev. B 66, 115316 (2002).
27. J.-B. Xia, K. W. Cheah, X.-L. Wang, D.-Z. Sun, and M.-Y. Kong, Phys. Rev. B 59, 10119 (1999).
28. H. Yu, J. Li, R. A. Loomis, P. C. Gibbons, L.-W. Wang, and W. E. Buhro, J. Am. Chem. Soc. 125, 16168 (2003).
29. L. C. Lew Yan Voon, R. Melnik, B. Lassen, and M. Willatzen, Nano Lett. 4, 289 (2004).