Nanostructured GaN on silicon fabricated by electrochemical and laser-induced etching

Materials Letters

Volumn 65, Issue 1, 2011, Pages 61-63

  Ramizy, Asmiet ^a   Hassan, Z ^a   Omar, Khalid ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Electrochemical etching; GaN; Laser induced etching; Nanostructure

Indexed keywords

ACOUSTIC PHONONS; AS-GROWN; AVERAGE DIAMETER; ETCHING PARAMETERS; GAN; GAN LAYERS; GAN ON SILICON; GAN THIN FILMS; LASER POWER DENSITY; LASER-INDUCED ETCHING; NANO-STRUCTURED; OPTICAL PHONONS; PHOTOLUMINESCENCE INTENSITIES; RAMAN SPECTRA; SI(111) SUBSTRATE;

CRYSTALLITES; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURES; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ELECTROCHEMICAL ETCHING;

EID: 77957728562     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.09.054     Document Type: Article

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