Synthesis of hexagonal and cubic GaN thin film on Si (111) using a low-cost electrochemical deposition technique

Materials Letters

Volumn 64, Issue 14, 2010, Pages 1604-1606

  Al Heuseen, K ^a   Hashim, M R ^a   Ali, N K ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Characterization methods; Cubic GaN; Deposition; Hexagonal GaN

Indexed keywords

CHARACTERIZATION METHODS; ELECTROCHEMICAL DEPOSITION; GAN THIN FILMS; GROWTH OF GAN; HEXAGONAL GAN; HEXAGONAL WURTZITE; PHONON MODE; PHOTOLUMINESCENCE SPECTRUM; RAMAN ANALYSIS; RAMAN SPECTRUM; SEM IMAGE; SI (1 1 1); SI(111) SUBSTRATE; XRD; ZINC BLENDE;

CRYSTALLITE SIZE; DEPOSITION; ELECTRODEPOSITION; GALLIUM NITRIDE; RAMAN SPECTROSCOPY; REDUCTION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; ZINC; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 77953133196     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.04.043     Document Type: Article

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