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Volumn 115, Issue 1-4, 1991, Pages 648-651
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Growth of Si-doped AlxGa1-xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ORGANOMETALLICS;
SAPPHIRE;
SILICON AND ALLOYS;
GALLIUM NITRIDE;
VAPOR PHASE EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 0026414732
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(91)90820-U Document Type: Article |
Times cited : (69)
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References (4)
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