Modified postannealing of the Ge condensation process for better-strained Si material and devices

Journal of Vacuum Science and Technology B

Volumn 28, Issue 5, 2010, Pages 1020-1025

  Liu, Xuyan ^a,b   Ma, Xiaobo ^a,b   Du, Xiaofeng ^a,b   Liu, Weili ^a   Song, Zhitang ^a   Lin, Chenglu ^a,c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c Shanghai Urban Investment Ring Expressway Construction and Development Co   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; FABRICATION; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SI-GE ALLOYS; SILICON ON INSULATOR TECHNOLOGY; SURFACE TOPOGRAPHY;

AMBIENTS; CONDENSATION PROCESS; GE CONDENSATION; GE DISTRIBUTION; GE FRACTION; POSTANNEALING; POSTANNEALING PROCESS; POTENTIAL TECHNIQUES; SIGE LAYERS; STRAIN VALUES;

DISLOCATIONS (CRYSTALS);

EID: 77957723610     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3491186     Document Type: Article

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