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Volumn 518, Issue 24 SUPPL., 2010, Pages

Fabrication of ZnO/α-NPD:F4-TCNQ based inorganic-organic hybrid junction: Effect of doping of organic layer on the diode like characteristics

(4) Kumar, Rajesh a,b Khare, Neeraj c Bhalla, G L b Kamalasanan, M N a

a NATIONAL PHYSICAL LABORATORY (India)

b UNIVERSITY OF DELHI (India)

c INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

Heterojunctions; Thin films; Zinc oxide

Indexed keywords

BARRIER HEIGHTS; CURRENT VOLTAGE; DIODE PARAMETERS; DOPING CONCENTRATION; EFFECT OF DOPING; HYBRID JUNCTION; IDEALITY FACTORS; INORGANIC-ORGANIC HYBRID; INTERFACE BARRIER; ORGANIC LAYERS; RECTIFICATION RATIO;

DIODES; ELECTRIC RECTIFIERS; HETEROJUNCTIONS; MAGNETIC FIELD MEASUREMENT; OXIDE FILMS; PRODUCT DEVELOPMENT; THIN FILMS; ZINC; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77957697874 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.123 Document Type: Article

Times cited : (9)

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