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Volumn 97, Issue 13, 2010, Pages

SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers

(9) Schmelzer, S a,b Brauhaus D a,b Hoffmann Eifert, S b Meuffels, P b Bottger U a,b Oberbeck, L c,f Reinig, P d,f Schroder U e,f Waser, R a,b

a RWTH AACHEN UNIVERSITY (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

c SolarWorld Innovations GmbH (Germany)

d SGS Germany GmbH (Germany)

e NaMLab GGmbH (Germany)

f QIMONDA DRESDEN GMBH AND CO OHG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; DIELECTRIC CONSTANTS; DIELECTRIC MEASUREMENTS; FILM CAPACITORS; OXIDIZED SILICON SUBSTRATES; PASSIVE LAYER; ROOM TEMPERATURE; SILICON SUBSTRATES; SRTIO; STO FILMS; TEMPERATURE DEPENDENCE; THIN-FILM CAPACITORS; ULTRA-THIN;

CAPACITORS; SILICON OXIDES; STRONTIUM ALLOYS; SURFACE ROUGHNESS; THIN FILM CIRCUITS; ULTRATHIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957673276 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3495990 Document Type: Article

Times cited : (23)

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