Origin of high field-effect mobility in solvent-vapor annealed anthradithiophene derivative

Organic Electronics

Volumn 11, Issue 12, 2010, Pages 1947-1953

  Wang, Chia Hsin ^a   Cheng, Yung Chiuan ^b   Su, Jing Wen ^b   Fan, Liang Jen ^a   Huang, Peng Yi ^c   Chen, Ming Chou ^c   Yang, Yaw Wen ^a,b  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Functionalized anthradithiophene; Organic field effect transistor; Solvent vapor annealing

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; ORGANIC FIELD EFFECT TRANSISTORS; SILICA; SOLVENTS; X RAY ABSORPTION; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY; X RAY DIFFRACTION;

ANTHRADITHIOPHENE; CRYSTALLINITIES; FIELD-EFFECT MOBILITIES; FILM MORPHOLOGY; HIGH FIELD EFFECT MOBILITY; IN-PLANE CRYSTALLINITY; SOLVENT-VAPOR ANNEALING; VAPOR ANNEALING;

ANNEALING;

EID: 77957316664     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.09.010     Document Type: Article

References (26)

1. C.D. Dimitrakopoulos, and P.R.L. Malenfant Adv. Mater. 14 2002 99
2. J.E. Anthony Chem. Rev. 106 2006 5028
3. D.J. Gundlach, J.E. Royer, S.K. Park, S. Subramanian, O.D. Jurchescu, B.H. Hamadani, A.J. Moad, R.J. Kline, L.C. Teague, O. Kirillov, C.A. Richter, J.G. Kushmerick, L.J. Richter, S.R. Parkin, T.N. Jackson, and J.E. Anthony Nat. Mater. 7 2008 216
4. H. Sirringhaus Adv. Mater. 17 2005 2411
5. P.F. Baude, D.A. Ender, M.A. Haase, T.W. Kelley, D.V. Muyres, and S.D. Theiss Appl. Phys. Lett. 82 2003 3964
6. Y.H. Kim, S.K. Park, D.G. Moon, W.K. Kim, and J.I. Han Jpn. J. Appl. Phys. 43 2004 3605
7. M.L. Tang, A.D. Reichardt, T. Siegrist, S.C.B. Mannsfeld, and Z. Bao Chem. Mater. 20 2008 4669
8. D. Braga, and G. Horowitz Adv. Mater. 21 2009 1
9. A. Babel, J.D. Wind, and S.A. Jenekhe Adv. Funct. Mater. 14 2004 891
10. J. Liu, Y. Shi, L. Ma, and Y. Yang J. Appl. Phys. 88 2000 605
11. Y. Zhao, Z.Y. Xie, Y. Qu, Y.H. Geng, and L.X. Wang Appl. Phys. Lett. 90 2007 3
12. M.M. Payne, S.R. Parkin, J.E. Anthony, C.-C. Kuo, and T.N. Jackson J. Am. Chem. Soc. 127 2005 4986
13. K.C. Dickey, J.E. Anthony, and Y.-L. Loo Adv. Mater. 18 2006 1721
14. W.H. Lee, D.H. Kim, J.H. Cho, Y. Jang, J.A. Lim, D. Kwak, and K. Cho Appl. Phys. Lett. 91 2007 092105
15. S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, and Y. Iwasa Nat. Mater. 3 2004 317
16. D. Kumaki, M. Yahiro, Y. Inoue, and S. Tokito Appl. Phys. Lett. 90 2007 133511
17. The triclinic structure of TESADT contains the following unit cell parameters: a = 6.73, b = 7.25, c = 16.70, α = 98.14°, β = 94.53°, and γ = 103.9°, from Ref. [12].
18. J. Stöhr NEXAFS Spectroscopy 1992 Springer-Verlag Berlin
19. P. Väterlein, M. Schmelzer, J. Taborski, T. Krause, F. Viczian, M. Bäßler, R. Fink, E. Umbach, and W. Wurth Surf. Sci. 452 2000 20
20. P. Yannoulis, K.H. Frank, and E.E. Koch Surf. Sci. 241 1991 325
21. W.-S. Hu, S.-Z. Weng, Y.-T. Tao, H.-J. Liu, H.-Y. Lee, L.-J. Fan, and Y.-W. Yang Langmuir 23 2007 12901
22. H.P. Jia, G.K. Pant, E.K. Gross, R.M. Wallace, and B.E. Gnade Org. Electron. 7 2006 16
23. G. Gu, M.G. Kane, J.E. Doty, and A.H. Firester Appl. Phys. Lett. 87 2005 243512
24. C. Ucurum, H. Goebel, F.A. Yildirim, W. Bauhofer, and W. Krautschneider J. Appl. Phys. 104 2008 084501
25. V. Coropceanu, J. Cornil, D.A. da Silva, Y. Olivier, R. Silbey, and J.L. Bredas Chem. Rev. 107 2007 926
26. K.P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D.J. Gundlach, B. Batlogg, A.N. Rashid, and G. Schitter J. Appl. Phys. 96 2004 6431