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Journal of Vacuum Science and Technology B

Volumn 28, Issue 4, 2010, Pages 817-822

Polythiophene-based charge dissipation layer for electron beam lithography of zinc oxide and gallium nitride

(4) Dylewicz, R a Lis, S b De La Rue, R M a Rahman, F a

a UNIVERSITY OF GLASGOW (United Kingdom)

b WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CONDUCTING POLYMERS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; GALLIUM NITRIDE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

ACCUMULATED CHARGE; CHARGE DISSIPATION; CONDUCTIVE POLYMER; ELECTRON-BEAM LITHOGRAPHY; HIGH-RESOLUTION PATTERNS; HYDROGEN SILSESQUIOXANE; NEGATIVE TONE RESIST; POLYMER LAYERS; PROCESSING METHOD; WIDE-BAND-GAP SEMICONDUCTOR;

ZINC OXIDE;

EID: 77957235549 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3460903 Document Type: Conference Paper

Times cited : (9)

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