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Volumn 10, Issue 6, 2004, Pages 804-809

The impact of charging on low-energy electron beam lithography

Author keywords

Charge induced distortion; Crossover voltage; LVEBL; Scanning electron microscope; Silicide; X ray mask

Indexed keywords


EID: 11244331574     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/S1431927604040711     Document Type: Conference Paper
Times cited : (20)

References (15)
  • 2
    • 36549103329 scopus 로고
    • Some considerations on the electric field induced in insulators by electron bombardment
    • CAZAUX, J. (1986). Some considerations on the electric field induced in insulators by electron bombardment. J Appl Phys 59, 1418-1430.
    • (1986) J Appl Phys , vol.59 , pp. 1418-1430
    • Cazaux, J.1
  • 4
    • 0010201167 scopus 로고    scopus 로고
    • Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures
    • DROUIN, D., BEAUVAIS, B., LAVALLÉE, E., MICHEL, S., MOUINE, J. & GAUVIN, R. (1997). Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures. J Vac Sci Technol B 15, 2269-2273.
    • (1997) J Vac Sci Technol B , vol.15 , pp. 2269-2273
    • Drouin, D.1    Beauvais, B.2    Lavallée, E.3    Michel, S.4    Mouine, J.5    Gauvin, R.6
  • 7
    • 0034155685 scopus 로고    scopus 로고
    • Study of the effect of layer thickness, beam energy, and metal density on the resistless silicide direct-write electron-beam lithography process for the fabrication of nanostructures
    • LAVALLÉE, E., BEAUVAIS, J., DROUIN, D. & CORBIN, J. (2000). Study of the effect of layer thickness, beam energy, and metal density on the resistless silicide direct-write electron-beam lithography process for the fabrication of nanostructures. J Vac Sci Technol A 18, 681-684.
    • (2000) J Vac Sci Technol A , vol.18 , pp. 681-684
    • Lavallée, E.1    Beauvais, J.2    Drouin, D.3    Corbin, J.4
  • 8
    • 0034317399 scopus 로고    scopus 로고
    • Calculation of surface potential and beam deflection due to charging effects in electron beam lithography
    • LEE, Y., LEE, W. & CHUN, K. (2000). Calculation of surface potential and beam deflection due to charging effects in electron beam lithography. J Vac Sci Technol B 18, 3095-3098.
    • (2000) J Vac Sci Technol B , vol.18 , pp. 3095-3098
    • Lee, Y.1    Lee, W.2    Chun, K.3
  • 9
    • 0029371410 scopus 로고
    • Resist charging in electron beam lithography
    • LIU, W., INGINO, J. & PEASE, R.F. (1995). Resist charging in electron beam lithography. J Vac Sci Technol B 13, 1979-1983.
    • (1995) J Vac Sci Technol B , vol.13 , pp. 1979-1983
    • Liu, W.1    Ingino, J.2    Pease, R.F.3
  • 10
    • 0035519131 scopus 로고    scopus 로고
    • Simulation of time-dependent charging of resist on Si under electron-beam irradiation
    • MASATOSHI, K. (2001). Simulation of time-dependent charging of resist on Si under electron-beam irradiation. J Vac Sci Technol B 19, 2516-2519.
    • (2001) J Vac Sci Technol B , vol.19 , pp. 2516-2519
    • Masatoshi, K.1
  • 12
    • 0000521121 scopus 로고
    • "Charging" effects in scanning electron microscope
    • SHAFFNER, T.J. & VAN VELD, R.D. (1971). "Charging" effects in scanning electron microscope. J Phys E Sci, Instrum 4, 633-637.
    • (1971) J Phys E Sci, Instrum , vol.4 , pp. 633-637
    • Shaffner, T.J.1    Van Veld, R.D.2
  • 13
    • 0035204331 scopus 로고    scopus 로고
    • Reduction in charging effects using vector scanning in the scanning electron microscope
    • THONG, J.T.L., LEE, K.W. & WONG, W.K. (2001). Reduction in charging effects using vector scanning in the scanning electron microscope. Scanning Microsc 23, 395-402.
    • (2001) Scanning Microsc , vol.23 , pp. 395-402
    • Thong, J.T.L.1    Lee, K.W.2    Wong, W.K.3
  • 14
    • 0033271254 scopus 로고    scopus 로고
    • Low energy electron-beam proximity projection lithography: Discovery of a missing link
    • UTSUMI, T. (1999). Low energy electron-beam proximity projection lithography: Discovery of a missing link. J Vac Sci Technol B 17, 2897-2902.
    • (1999) J Vac Sci Technol B , vol.17 , pp. 2897-2902
    • Utsumi, T.1
  • 15
    • 0028799461 scopus 로고
    • Charging control using pulsed scanning electron microscopy
    • WONG, W.K., PHANG, J.C.H. & THONG, J.T.L. (1995). Charging control using pulsed scanning electron microscopy. Scanning Microsc 17, 312-315.
    • (1995) Scanning Microsc , vol.17 , pp. 312-315
    • Wong, W.K.1    Phang, J.C.H.2    Thong, J.T.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.