Pattern prediction in EUV resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7520, Issue , 2009, Pages

  Biafore, John J ^a   Smith, Mark D ^a   Wallow, Tom ^b   Nalleau, Patrick ^c   Blankenship, David ^a   Deng, Yunfei ^b  

^a KLA Tencor Austin   (United States)

^b IBM MICROELECTRONICS   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

EUV; EUV photoresist; LER; LWR; Optical lithography; Stochastic resist modeling

Indexed keywords

13.5 NM; ABSORBANCES; ABSORPTION SITES; ACID GENERATION; ACID GENERATORS; CRITICAL STRUCTURES; ELECTRON BEAM RESIST; ELECTRON SCATTERING MODEL; EUV PHOTORESIST; EUV RESISTS; EXPERIMENTAL DATA; FLEXIBLE SIMULATION; GAIN INSIGHT; HIGH ENERGY; LINEWIDTH ROUGHNESS; MOLECULE COUNTING; OPTICAL LITHOGRAPHY; PARAMETERIZED; RESIST MATRIX; SECONDARY ELECTRONS;

ACIDS; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; MULTIPHOTON PROCESSES; PARTICLE DETECTORS; PHOTOIONIZATION; PHOTOLITHOGRAPHY; PHOTONS; PHOTORESISTORS; ROUGHNESS MEASUREMENT; STOCHASTIC SYSTEMS;

ULTRAVIOLET DEVICES;

EID: 77952026717     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.836910     Document Type: Conference Paper

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