Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 272-275

  Detchprohm, T ^a,b   Xia, Y ^a,b   Xi, Y ^a,b   Zhu, M ^a,b   Zhao, W ^a,b   Li, Y ^a,b   Schubert, E F ^a,b   Liu, L ^c   Tsvetkov, D ^c   Hanser, D ^c   Wetzel, C ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

A1. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

ATOMICALLY FLAT POLISHED SURFACES; HOMOEPITAXIAL GROWTH; SAPPHIRE SUBSTRATES; THREADING DISLOCATION DENSITY;

EPITAXIAL GROWTH;

EID: 33846461342     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.129     Document Type: Article

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