Future challenges and directions for nitride materials and light emitters

Proceedings of the IEEE

Volumn 85, Issue 11, 1997, Pages 1750-1751

  Akasaki, Isamu ^a   Wetzel, Christian ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LIGHT EMITTING DIODES; NITRIDES; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SUBSTRATES;

OPTICAL DIPOLE MATRIX ELEMENTS; OPTICAL MIRROR STRUCTURES;

OPTOELECTRONIC DEVICES;

EID: 0031273473     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.649652     Document Type: Article

References (2)

1. H. Amano M. Kito K. Hiramatsu I. Akasaki p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) Jpn. J. Appl. Phys. Pt. 2 28 L2112 L2114 1989
2. S.S. Chang J. Pankove M. Leksono B. van Zeghbroeck 500 degrees C operation of a GaN/SiC heterojunction bipolar transistor 53rd Annual Device Research Conference Digest 106 107 1995 IEEE Press New York 3596 10711 496291