Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

Journal of Physics D: Applied Physics

Volumn 43, Issue 32, 2010, Pages

  Ben Rejeb, S ^a   Debbichi, M ^a   Said, M ^a   Gassenq, A ^b   Tournie E ^b   Christol, P ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC INTERFACE; BAND GAP ENERGY; ELECTRONIC BAND STRUCTURE; EXPERIMENTAL DATA; INTERFACE DESIGNS; LASER DIODES; LASER EMISSION; LASER STRUCTURES; MID-INFRARED EMISSION; OPTICAL PERFORMANCE; SHORT-PERIOD SUPERLATTICES;

DIODES; GALLIUM ALLOYS; OPTICAL GAIN; SUPERLATTICES;

INFRARED LASERS;

EID: 77956994683     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/32/325102     Document Type: Article

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