InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3m at room-temperature

Electronics Letters

Volumn 45, Issue 3, 2009, Pages 165-167

  Gassenq, A ^a   Boissier, G ^a   Grech, P ^a   Narcy, G ^a   Baranov, A N ^a   Tournie E ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES;

ACTIVE ZONES; CONTINUOUS-WAVE OPERATIONS; DIODE LASERS; IR LASERS; LASER DIODES; LASER EMISSIONS; ROOM TEMPERATURES; SHORT-PERIOD SUPERLATTICES; WAVELENGTH RANGES;

LASERS;

EID: 59349109403     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20092882     Document Type: Article

References (9)

1. Rothman, L.S.: et al. ' The HITRAN 2004 molecular spectroscopic database ', J. Quant. Spectrosc. Radiat. Transf., 2005, 96, p. 139-204 10.1016/j.jqsrt.2004.10.008 0022-4073
2. Devenson, J., Cathabard, O., Teissier, R., and Baranov, A.N.: ' High temperature operation of λ ∼ 3.3m quantum cascade lasers ', Appl. Phys. Lett., 2007, 91, p. 141106 0003-6951
3. Shterengas, L., Belenky, G., Kipshidze, G., and Hosoda, T.: ' Room-temperature operated 3.1m type-I GaSb-based diode lasers with 80mW continuous-wave output power ', Appl. Phys. Lett., 2008, 92, p. 171111 10.1063/1.2919720 0003-6951
4. Deguffroy, N., Tasco, V., Gassenq, A., Cerutti, L., Trampert, A., Baranov, A.N., and Tournié, E.: ' InAs/GaSb short-period superlattice injection lasers operating in the 2.5m to 3.5m mid-infrared wavelength range ', Electron. Lett., 2007, 43, p. 1285-1286 0013-5194
5. Haugan, H.J., Szmulowicz, F., Brown, G.J., and Mahalingam, K.: ' Band gap tuning of InAs/GaSb type-II superlattices for mid-infrared detection ', J. Appl. Phys., 2004, 96, p. 2580-2585 10.1063/1.1776321 0021-8979
6. Tasco, V., Deguffroy, N., Baranov, A.N., Tournié, E., Satpati, B., Trampert, A., Dunaevskii, M., and Titkov, A.: ' High density, uniform InSb/GaSb quantum dots emitting in the mid infrared region ', Appl. Phys. Lett., 2006, 89, p. 263118 10.1063/1.2425041 0003-6951
7. Shterengas, L., Belenky, G.L., Kim, J.G., and Martinelli, R.U.: ' Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ>2.5m ', Semicond. Sci. Technol., 2004, 19, p. 655-658 10.1088/0268-1242/19/5/016 0268-1242
8. Rainò, G., Salhi, A., Tasco, V., Intartaglia, R., Cingolani, R., Rouillard, Y., Tournié, E., and De Giorgi, M.: ' Subpicosecond timescale carrier dynamics in GaInAsSb/AlGaAsSb double quantum wells emitting at 2.3m ', Appl. Phys. Lett., 2008, 92, p. 101931 10.1063/1.2894586 0003-6951
9. Adams, A.R.: ' Band-structure engineering for low-threshold, high-efficiency semiconductor lasers ', Electron. Lett., 1986, 22, p. 249-250 10.1049/el:19860171 0013-5194