Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Opto-Electronics Review

Volumn 14, Issue 1, 2006, Pages 71-77

  Szmulowicz, F ^e   Haugan, H J ^a,b   Brown, G J ^a,c   Mahalingam, K ^e   Ullrich, B ^a,c   Munshi, S R ^d   Grazulis, L ^a,b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^c UNIVERSAL TECHNOLOGY CORPORATION   (United States)

^d BOWLING GREEN STATE UNIVERSITY   (United States)

^e NONE

Author keywords

Envelope function; InAs GaSb; Infrared detector; Interface; Superlattice

Indexed keywords

ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INFRARED DETECTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ANTIMONY COMPOUNDS; SUPERLATTICES; TEMPERATURE;

ABSORPTION CO-EFFICIENT; ENVELOPE FUNCTIONS; INAS/GASB; INAS/GASB TYPE-II SUPERLATTICES; LOW TEMPERATURE PHOTOLUMINESCENCE; MID INFRARED DETECTORS; OPERATING TEMPERATURE; ROOM-TEMPERATURE OPERATION;

GALLIUM COMPOUNDS;

EID: 33645791231     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-006-0010-4     Document Type: Conference Paper

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