Effect of interface structure on the optical properties of InAs/GaSb laser active regions

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1683-1685

  Lau, Wayne H ^a   Flattö, Michael E ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BAND GAPS; COMPOSITIONAL GRADIENTS; FUNDAMENTAL BAND GAP; INAS/GASB; INAS/GASB SUPERLATTICES; INTERFACE BONDING; INTERFACE STRUCTURES; INTERNAL LOSS;

ENERGY GAP; INDIUM ANTIMONIDES; OPTICAL PROPERTIES;

INTERFACES (MATERIALS);

EID: 79956027255     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456238     Document Type: Article

References (20)

1. D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y. H. Zhang, H. L. Dunlap, and L. West, Appl. Phys. Lett. 67, 3700 (1995). apl APPLAB 0003-6951
2. T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, and L. West, Electron. Lett. 31, 275 (1995). ell ELLEAK 0013-5194
3. T. C. Hasenberg, R. H. Miles, A. R. Kost, and L. West, IEEE J. Quantum Electron. 33, 1403 (1997). ejq IEJQA7 0018-9197
4. W. W. Bewley, H. Lee, I. Vurgaftman, R. J. Menna, C. L. Felix, R. U. Martinelli, D. W. Stokes, D. Z. Garbuzov, J. R. Meyer, M. Maiorov, J. C. Connolly, A. R. Sugg, and G. H. Olsen, Appl. Phys. Lett. 76, 256 (2000). apl APPLAB 0003-6951
5. M. E. Flatté, J. T. Olesberg, S. A. Anson, T. F. Boggess, T. C. Hasenberg, R. H. Miles, and C. H. Grein, Appl. Phys. Lett. 70, 3212 (1997). apl APPLAB 0003-6951
6. C. H. Grein, P. M. Young, and H. Ehrenreich, J. Appl. Phys. 76, 1940 (1994). jap JAPIAU 0021-8979
7. M. E. Flatté, C. H. Grein, H. Ehrenreich, R. H. Miles, and H. Cruz, J. Appl. Phys. 78, 4552 (1995). jap JAPIAU 0021-8979
8. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, Appl. Phys. Lett. 67, 757 (1995). apl APPLAB 0003-6951
9. G. C. Dente and M. L. Tilton, J. Appl. Phys. 86, 1420 (1999). jap JAPIAU 0021-8979
10. L. W. Wang, S. H. Wei, T. Mattila, A. Zunger, I. Vurgaftman, and J. R. Meyer, Phys. Rev. B 60, 5590 (1999). prb PRBMDO 0163-1829
11. O. Krebs and P. Voisin, Phys. Rev. Lett. 77, 1829 (1996). prl PRLTAO 0031-9007
12. E. L. Ivchenko, A. Y. Kaminski, and U. Rössler, Phys. Rev. B 54, 5852 (1996). prb PRBMDO 0163-1829
13. J. T. Olesberg, W. H. Lau, M. E. Flatté, C. Yu, E. Altunkaya, E. M. Shaw, T. C. Hasenberg, and T. F. Boggess, Phys. Rev. B 64, 201301 (2001). prb PRBMDO 0163-1829
14. A. P. Ongstad, R. Kaspi, C. E. Moeller, M. L. Tilton, D. M. Gianardi, J. R. Chavez, and G. C. Dente, J. Appl. Phys. 89, 2185 (2001). jap JAPIAU 0021-8979
15. J. T. Olesberg, Ph.D. thesis, University of Iowa, 1999.
16. W. H. Lau, J. T. Olesberg, and M. E. Flatté (to be published).
17. O. Madelung, Semiconductors-Basic Data, 2nd ed. (Springer, New York, 1996); and references therein.
18. The band-edge potentials of the interface region are chosen to be those of InSb for one interface and GaAs for the other. The band gap trends are insensitive to these potentials.
19. J. Steinshnider, J. Harper, M. Weimer, C.-H. Lin, S. S. Pei, and D. H. Chow, Phys. Rev. Lett. 85, 4562 (2000). prl PRLTAO 0031-9007
20. R. Kaspi, C. Moeller, A. Ongstad, M. L. Tilton, D. Gianardi, G. Dente, and P. Gopaladasu, Appl. Phys. Lett. 76, 409 (2000). apl APPLAB 0003-6951