A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Debbichi, M ^a   Ridene, S ^b   Bouchriha, H ^b   Ben Fredj, A ^a   Said M ^a   Lazzari, J L ^c   Cuminal, Y ^d   Christol, P ^d  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE-NITRIDE; INAS; LASER DIODES; LASER STRUCTURES; MIDINFRARED; MODAL GAIN; MULTI-QUANTUM WELL LASERS; P-MODEL; ROOM TEMPERATURE; SUB-BANDS; TE AND TM MODES; THEORETICAL STUDY; TOTAL LOSS;

INDIUM ARSENIDE; NITRIDES; QUANTUM WELL LASERS;

LASERS;

EID: 68949117848     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085010     Document Type: Article

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