Key growth parameters for the electrodeposition of ZnO films with an intense UV-Light emission at room temperature

Journal of Physical Chemistry C

Volumn 113, Issue 24, 2009, Pages 10422-10431

  Pauporte T ^a   Jouanno, E ^a   Pelle F ^a   Viana, B ^a   Aschehoug, P ^a  

^a PSL RESEARCH UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BATH TEMPERATURES; BURSTEIN-MOSS EFFECTS; DEEP DEFECTS; DENSE FILMS; DEPOSITION PARAMETERS; DEPOSITION POTENTIAL; EXCITONIC EMISSION; GROWTH PARAMETERS; HIGH QUALITY; LOW OXYGEN; LOW TEMPERATURE GROWTH; N-TYPE DOPING; NANOWIRE ARRAYS; OVER-VOLTAGE; ROOM TEMPERATURE; UV EMISSIONS; UV-LIGHT; ZINC IONS; ZNO; ZNO FILMS; ZNO NANOROD;

CARRIER CONCENTRATION; CHLORINE COMPOUNDS; ELECTRODEPOSITION; FILM PREPARATION; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOWIRES; OXYGEN; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 67650751124     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9010179     Document Type: Article

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