AlGaN-free blue III-nitride laser diodes grown on c-plane GaN substrates

Applied Physics Express

Volumn 3, Issue 9, 2010, Pages

  Dorsaz, Julien ^a   Castiglia, Antonino ^a   Cosendey, Gatien ^a   Feltin, Eric ^b   Rossetti, Marco ^c   Duelk, Marcus ^c   Velez, Christian ^c   Carlin, Jean François ^a   Grandjean, Nicolas ^a  

^a EPFL   (Switzerland)

^b NOVAGAN   (Switzerland)

^c EXALOS AG   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; ASYMMETRIC CLADDING; CW LASING; DIFFERENTIAL EFFICIENCY; ELECTRICAL AND OPTICAL PROPERTIES; GAN SUBSTRATE; HIGH-REFLECTION COATING; III-NITRIDE; LASER DIODES; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTIPLE-QUANTUM-WELL LASER DIODES; N-ALGAN; OPTIMIZED DESIGNS;

DIODES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; ORGANOMETALLICS; QUANTUM WELL LASERS;

GALLIUM ALLOYS;

EID: 77956752899     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.092102     Document Type: Article

References (16)

1. U. Strauss, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, and A. Lell: Proc. SPIE 6894 (2008) 689417.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74.
3. T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai: Appl. Phys. Express 2 (2009) 062201.
4. Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura: Appl. Phys. Express 2 (2009) 082101.
5. A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss: Appl. Phys. Express 3 (2010) 061003.
6. E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J.-F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez: Appl. Phys. Lett. 95 (2009) 081107.
7. K. Saito, H. Watanabe, T. Miyajima, M. Ikeda, and H. Yokoyama: Appl. Phys. Lett. 96 (2010) 031112.
8. L. Zhang, D. Jiang, J. Zhu, D. Zhao, Z. Liu, S. Zhang, and H. Yang: J. Appl. Phys. 105 (2009) 023104.
9. H. Ryu, K. Ha, J. Son, H. Paek, Y. Sung, K. Kim, H. Kim, Y. Park, S. Lee, and O. Nam: J. Appl. Phys. 105 (2009) 103102.
10. H. Jang, J. Baik, M.-K. Lee, H.-J. Shin, and J.-L. Lee: J. Electrochem. Soc. 151 (2004) G536.
11. S. Yellen, A. Shepard, R. J. Dalby, J. Baumann, H. Serreze, T. Guido, R. Soltz, K. Bystrom, C. Harding, and R. Waters: IEEE J. Quantum Electron. 29 (1993) 2058.
12. Y. Lin, C. Huang, M. Hardy, P. Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. Speck, S. DenBaars, and S. Nakamura: Appl. Phys. Lett. 95 (2009) 081110.
13. A. Tyagi, R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura: Appl. Phys. Express 3 (2010) 011002.
14. T. Asano, M. Takeya, T. Mizuno, S. Ikeda, Y. Ohfuji, T. Fujimoto, K. Oikawa, S. Goto, T. Hashizu, K. Aga, and M. Ikeda: Proc. SPIE 5365 (2004) 297.
15. P. Bienstman, L. Vanholme, M. Ibanescu, P. Dumon, and R. Baets: CAMFR-CAvity Modeling FRamework [http://camfr.sourceforge.net].
16. A. Castiglia, E. Feltin, G. Cosendey, A. Altoukhov, J.-F. Carlin, R. Butté, and N. Grandjean: Appl. Phys. Lett. 94 (2009) 193506.