Broadband blue superluminescent light-emitting diodes based on GaN

Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

  Feltin, E ^a   Castiglia, A ^a   Cosendey, G ^a   Sulmoni, L ^a   Carlin, J F ^a   Grandjean, N ^a   Rossetti, M ^b   Dorsaz, J ^b   Laino, V ^b   Duelk, M ^b   Velez, C ^b  

^a EPFL   (Switzerland)

^b EXALOS AG   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; AVERAGE POWER; CW OPERATION; DUTY CYCLES; EMISSION BANDWIDTH; EMISSION WAVELENGTH; EPITAXIAL STRUCTURE; GAN SUBSTRATE; III-NITRIDE; OPTICAL OUTPUT POWER; PULSED OPERATION; QUANTUM WELL; ROOM TEMPERATURE; SUPERLUMINESCENCE;

CURRENT DENSITY; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 69549124224     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3202786     Document Type: Article

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