Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

Optical and Quantum Electronics

Volumn 41, Issue 9, 2009, Pages 699-704

  Hu, W D ^a   Chen, X S ^a   Ye, Z H ^a   Lin, C ^a   Yin, F ^a   Lu, W ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Design; Numerical simulation; Spectral photoresponse; Two color HgCdTe infrared photodiode

Indexed keywords

2-D NUMERICAL SIMULATION; ABSORPTION LAYER; DOPING PROFILES; HETEROSTRUCTURE DETECTORS; HGCDTE; NUMERICAL SIMULATION; OPTIMAL THICKNESS; PHOTORESPONSES; PHOTOVOLTAIC DETECTOR; SPECTRAL PHOTORESPONSE; TWO-COLOR;

ABSORPTION; COLOR; COMPUTER SIMULATION; MERCURY COMPOUNDS; NUMERICAL ANALYSIS; PHOTODIODES;

MATHEMATICAL MODELS;

EID: 77956617812     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-010-9381-3     Document Type: Article

References (15)

1. Bellotti, E., Orsogna, D. D.: Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors. IEEE J. Quantum Electron. 42, 418-426 (2006)
2. Borniol, E., Baylet, J., Zanatta, J., Mibord, S., Gravrand, O., Rothan, F., Borniol, E., Castelein, P., Chamonal, J., Ravetto, M., Destéfanis, G.: Dual-band infrared HgCdTe focal plane array. SPIE 4820, 491-499 (2003)
3. Device simulator Sentaurus Device (former ISE-DESSIS) Ver. 2007. 03
4. Hu, W. D., Chen, X. S., Quan, Z. J., Xia, C. S., Lu, W., Yuan, H. J.: Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Appl. Phys. Lett. 89, 243501-1-3 (2006)
5. Hu, W. D., Chen, X. S., Yin, F., Quan, Z. J., Ye, Z. H., Hu, X. N., Li, Z. F., Lu, W.: Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors. J. Appl. Phys. 105, 104502-1-8 (2009a)
6. Hu, W. D., Chen, X. S., Yin, F., Ye, Z. H., Lin, C., Hu, X. N., Quan, Z. J., Li, Z. F., Lu, W.: Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes. Opt. Quantum Electron. 40, 1255-1260 (2009b)
7. Hu, W. D., Chen, X. S., Yin, F., Zhang, J. B., Lu, W.: Two dimensional transient simulations of drain lag and current collapse in GaN-based High-electron-mobility-transistors. J. Appl. Phys. 105, 084502-1-7 (2009c)
8. Hu, W. D., Chen, X. S., Ye, Z. H., Lu, W.: An improvement on short-wavelength photoresponse for heterostructure HgCdTe two-color infrared detector. Semicond. Sci. Technol. 25, 045028-1-5 (2010)
9. Quan, Z. J., Li, Z. F., Hu, W. D., Ye, Z. H., Hu, X. N., Lu, W.: Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode. J. Appl. Phys. 100, 084503-1-6 (2006a)
10. Quan, Z. J., Chen, X. S., Hu, W. D., Ye, Z. H., Hu, X. N., Li, Z. F., Lu, W.: Modeling of dark characteristics for long-wavelength HgCdTe photodiode. Opt. Quantum Electron. 38, 1107-1113 (2006b) (Pubitemid 46433448)
11. Rogalski, A.: HgCdTe infrared detector material: history, status and outlook. Rep. Prog. Phys. 68, 2267-2336 (2005)
12. Shen, S. C.: Comparison and competition between MCT and QW structure material for use in IR detectors. Microelectronics J. 25, 713-719 (1994)
13. Wang, X. D., Hu, W. D., Chen, X. S., Lu, W., Tang, H. J., Li, T., Gong, H. M.: Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode. Opt. Quantum Electron. 40, 1261-1266 (2009)
14. Wenus, J., Rutkowski, J., Rogalski, A.: Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes. IEEE Trans. Electron Devices 48, 1326-1332 (2001) (Pubitemid 32644572)
15. Xia, C. S., Hu, W. D., Wang, C., Li, Z. F., Chen, X. S., Lu, W., Simon Li, Z. M., Li, Z. Q.: Simulation of In-GaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects. Opt. Quantum Electron. 38, 1007-1089 (2006)