Modeling of dark characteristics for long-wavelength HgCdTe photodiode

Optical and Quantum Electronics

Volumn 38, Issue 12-14, 2006, Pages 1107-1113

  Quan, Z J ^a   Chen, X S ^a   Hu, W D ^a   Ye, Z H ^a   Hu, X N ^a   Li, Z F ^a   Lu, W ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Device modeling; HgCdTe (MCT); Photodiode

Indexed keywords

DEVICE MODELING; DEVICE PARAMETERS; HGCDTE (MCT);

APPROXIMATION ALGORITHMS; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; MERCURY COMPOUNDS; PARAMETER ESTIMATION; WAVELENGTH;

PHOTODIODES;

EID: 33947275104     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-006-9046-4     Document Type: Conference Paper

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