Dark current simulation of InP/In 0.53Ga 0.47As/InP p-i-n photodiode

Optical and Quantum Electronics

Volumn 40, Issue 14-15 SPEC. ISS., 2008, Pages 1261-1266

  Wang, X D ^a   Hu, W D ^a   Chen, X S ^a   Lu, W ^a   Tang, H J ^a   Li, T ^a   Gong, H M ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Dark current; Generation recombination current; InGaAs photodiode; Numerical simulation

Indexed keywords

2D SIMULATIONS; ABSORPTION LAYER; DOPING CONCENTRATION; GENERATION-RECOMBINATION; GENERATION-RECOMBINATION CURRENT; INGAAS PHOTODIODE; LOW BIAS; NUMERICAL SIMULATION; PIN PHOTODIODE; SIMULATION RESULT;

COMPUTER SIMULATION; DARK CURRENTS; GALLIUM; OPTOELECTRONIC DEVICES; PHOTODIODES; SEMICONDUCTING INDIUM;

MATHEMATICAL MODELS;

EID: 69949105202     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-009-9279-0     Document Type: Article

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