An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Hu, Wei Da ^a   Chen, Xiao Shuang ^a   Ye, Zhen Hua ^a   Lu, Wei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL ANALYSIS; HETEROSTRUCTURES; HGCDTE; IMPURITY DOPING; IN-SITU; MBE GROWTH; MESA ISOLATION; METALLIZATIONS; MID-WAVELENGTH INFRARED; NUMERICAL SIMULATION; P-N HOMOJUNCTIONS; P-N JUNCTION; PHOTORESPONSES; SHORT-WAVELENGTH; SHORT-WAVELENGTH INFRARED; TWO-COLOR; TWO-COLOR DETECTOR;

COLOR; COMPUTER SIMULATION; DETECTORS; INFRARED DETECTORS; INFRARED RADIATION; MERCURY COMPOUNDS; PASSIVATION; PHOTODIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

WAVELENGTH;

EID: 77951037921     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045028     Document Type: Article

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