Pentacene-based TTFTs with polymer gate dielectric and NiOx electrodes

Electrochemical and Solid-State Letters

Volumn 8, Issue 6, 2005, Pages

  Hwang, D K ^a   Park, Ji Hoon ^b   Lee, Jiyoul ^a   Choi, Jeong M ^a   Kim, Jae Hoon ^a   Kim, Eugene ^b   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRODES; EVAPORATION; GATES (TRANSISTOR); NICKEL COMPOUNDS; PERMITTIVITY; POLYMERS; SPIN COATING;

DIELECTRIC STRENGTH; ELECTRODE MATERIALS; GATE DIELECTRICS; PENTACENE;

THIN FILM TRANSISTORS;

EID: 20844455956     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1897350     Document Type: Article

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