Self-protected GaN power devices with reverse drain blocking and forward current limiting capabilities

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 343-346

  Zhou, Chunhua ^a   Chen, Wanjun ^a,b   Piner, Edwin L ^c   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BLOCKING CAPABILITY; CATHODE ELECTRODES; CURRENT LIMITING; DEVICE FABRICATIONS; DRAIN STRUCTURE; FIELD-EFFECT; FORWARD CURRENTS; INTELLIGENT FUNCTIONS; NEGATIVE TEMPERATURES; NEW DESIGN; ON STATE CURRENT; ONSET VOLTAGES; POWER DEVICES; PROCESS STEPS; REVERSE CURRENTS; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY CONTACTS; SELF-LIMITED; THERMAL STABILITY;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LASERS; OHMIC CONTACTS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

ELECTRIC RECTIFIERS;

EID: 77956594368     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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