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Volumn 39, Issue 5, 2003, Pages 1508-1513

A 4H-SiC high-power-density VJFET as controlled current limiter

Author keywords

Command integration; Current limiter; High voltage; JFET; Serial protection device

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT CONTROL; ELECTRIC RESISTANCE; FINITE ELEMENT METHOD; GATES (TRANSISTOR); LIMITERS; OPTIMIZATION; SEMICONDUCTOR DIODES; SILICON CARBIDE;

EID: 0242274179     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2003.816465     Document Type: Article
Times cited : (18)

References (11)
  • 4
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    • Current regulative diode
    • SEMITEC I.E. Corp.; [Online]
    • SEMITEC I.E. Corp., Current regulative diode. [Online] Available: http://www.semitec.co.jp/english/indexe.htm
    • (2003)
  • 5
    • 4243851072 scopus 로고    scopus 로고
    • Current limiter circuit
    • Siemens Corp.; World Patent W09727657, July 30
    • Siemens Corp., "Current limiter circuit," World Patent W09727657, July 30, 1997.
    • (1997)
  • 6
    • 0034447654 scopus 로고    scopus 로고
    • Electrical and electrothermal 2D simulation of a 4H-SiC high voltage current limiting device for serial protection application
    • F. Nallet and A. Senes et al., "Electrical and electrothermal 2D simulation of a 4H-SiC high voltage current limiting device for serial protection application," in Proc. ISPSD'00, Toulouse, France, May 22-25, 2000, pp. 287-290.
    • Proc. ISPSD'00, Toulouse, France, May 22-25, 2000 , pp. 287-290
    • Nallet, F.1    Senes, A.2
  • 8
    • 0009728440 scopus 로고    scopus 로고
    • ISE TCAD, AG, Zurich, Switzerland
    • Integrated System Engineering, ISE TCAD, AG, Zurich, Switzerland, 1998.
    • (1998) Integrated System Engineering
  • 9
    • 0028447880 scopus 로고
    • SiC devices: Physics and numerical simulation
    • June
    • M. Ruff and H. Mitlehner et al., "SiC devices: physics and numerical simulation," IEEE Trans. Electron Devices, vol. 41, pp. 1040-1054, June 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1040-1054
    • Ruff, M.1    Mitlehner, H.2
  • 10
    • 0011975166 scopus 로고    scopus 로고
    • Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC
    • Thesis, Technischen Univ. München, Munich, Germany, May 15
    • M. Lades, "Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC," Thesis, Technischen Univ. München, Munich, Germany, May 15, 2000.
    • (2000)
    • Lades, M.1
  • 11
    • 18744433850 scopus 로고    scopus 로고
    • Compatibility of VJFET technology to MESFET fabrication and its interest to system integration: Fabrication of 6H and 4H-SiC 110V lateral MESFET
    • D. Tournier et al., "Compatibility of VJFET technology to MESFET fabrication and its interest to system integration: fabrication of 6H and 4H-SiC 110V lateral MESFET," Mater. Sci. Forum, vol. 389, pp. 1403-1407, 2002.
    • (2002) Mater. Sci. Forum , vol.389 , pp. 1403-1407
    • Tournier, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.