Normally-off operation of Al2O3/GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 229-231

  Kim, Dong Seok ^a   Ha, Jong Bong ^a   Kim, Sung Nam ^a   Kwak, Eun Hwan ^a   Lee, Sung Gil ^a   Kang, Hee Sung ^a   Lee, Jong Sub ^a   Im, Ki Sik ^a   Kim, Ki Won ^a   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; DEPLETION EFFECTS; DEVICE PERFORMANCE; EXTRINSIC TRANSCONDUCTANCE; GAN BUFFER LAYERS; GATE INSULATOR; MAXIMUM DRAIN CURRENT; MOS-FET; RECESSED GATE; SPECIFIC-ON-RESISTANCE; SUBTHRESHOLD SLOPE;

BUFFER LAYERS; DRAIN CURRENT; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THRESHOLD VOLTAGE;

GALLIUM NITRIDE;

EID: 77956577056     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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