메뉴 건너뛰기




Volumn , Issue , 2010, Pages 534-541

Analysis of the trade-off between input current quality and efficiency of high switching frequency PWM rectifiers

Author keywords

Efficiency; High frequency power converters; Input current quality; Super junction

Indexed keywords

CHIP AREAS; DRAIN-SOURCE CURRENTS; DRAIN-SOURCE VOLTAGE; FEED-FORWARD CONTROL SIGNALS; HIGH FREQUENCY POWER CONVERTERS; INPUT CURRENT; INPUT CURRENT DISTORTION; MOS-FET; NONLINEAR BEHAVIOR; NONLINEAR SWITCHING; ON-STATE RESISTANCE; PARASITIC CAPACITANCE; PARETO CURVE; POWER MOSFETS; PWM RECTIFIER; SEMICONDUCTOR TECHNOLOGY; SUPER JUNCTION; SUPER JUNCTIONS;

EID: 77956504062     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5543283     Document Type: Conference Paper
Times cited : (9)

References (23)
  • 2
    • 85008054196 scopus 로고    scopus 로고
    • Impact of EMC filters on the power density of modern three-phase PWM converters
    • June
    • M.L. Heldwein, J. W. Kolar, "Impact of EMC Filters on the Power Density of Modern Three-Phase PWM Converters," IEEE Trans. Power Electron., Vol.24, No.6, June 2009, pp.1577-1588.
    • (2009) IEEE Trans. Power Electron. , vol.24 , Issue.6 , pp. 1577-1588
    • Heldwein, M.L.1    Kolar, J.W.2
  • 6
    • 72949109559 scopus 로고    scopus 로고
    • Super junction MOS devices - From device development towards system optimization
    • 8-10 Sept.
    • H. Kapels, "Super junction MOS devices - From device development towards system optimization," Proc. of the EPE '09, 8-10 Sept. 2009, pp.1-7.
    • (2009) Proc. of the EPE '09 , pp. 1-7
    • Kapels, H.1
  • 9
    • 77956536038 scopus 로고    scopus 로고
    • Exploring the pareto front of multi-objective single-phase PFC rectifier design optimization - 99.2 % efficiency vs. 7 kW/din3 power density
    • 17-20 May
    • J.W. Kolar, J. Biela, J. Minibock, "Exploring the pareto front of multi-objective single-phase PFC rectifier design optimization - 99.2 % efficiency vs. 7 kW/din3 power density," Proc. of the IPEMC '09, 17-20 May 2009, pp.1-21.
    • (2009) Proc. of the IPEMC '09 , pp. 1-21
    • Kolar, J.W.1    Biela, J.2    Minibock, J.3
  • 10
    • 0031251517 scopus 로고    scopus 로고
    • Theory of semiconductor superjunction devices
    • T. Fujihira, "Theory of Semiconductor Superjunction Devices," Jpn. J. Appl. Phys. Vol. 36, 1997, pp.6254-6262.
    • (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 6254-6262
    • Fujihira, T.1
  • 11
    • 0032598936 scopus 로고    scopus 로고
    • Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
    • P.M. Shenoy, A. Bhalla, G.M. Dolny, "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET," Proc. of the IDPSD '99, pp.99-102.
    • Proc. of the IDPSD '99 , pp. 99-102
    • Shenoy, P.M.1    Bhalla, A.2    Dolny, G.M.3
  • 12
    • 84907568068 scopus 로고    scopus 로고
    • Compensation devices versus power MOS and high speed IGBT - A device physics based guideline for the application
    • 11-13 September
    • G. Deboy, M. Purschel, M. Schmitt, A. Willmeroth, "Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application," Proc. of the 31st Europ. SolidState Device Research Conf., 11-13 September 2001, pp.61-68.
    • (2001) Proc. of the 31st Europ. SolidState Device Research Conf. , pp. 61-68
    • Deboy, G.1    Purschel, M.2    Schmitt, M.3    Willmeroth, A.4
  • 13
    • 0036443093 scopus 로고    scopus 로고
    • Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS using theory of novel voltage sustaining layer
    • P.N. Kondekar, C.D. Parikh, M.B. Patil, "Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS using theory of novel voltage sustaining layer," Proc. of the PESC 2002, vol.4, pp.1769-1775.
    • Proc. of the PESC 2002 , vol.4 , pp. 1769-1775
    • Kondekar, P.N.1    Parikh, C.D.2    Patil, M.B.3
  • 14
    • 0036564370 scopus 로고    scopus 로고
    • Modeling of the CoolMOSTM transistor - Part I: Device physics
    • May
    • B.J. Daniel, C.D. Parikh, M.B. Patil, "Modeling of the CoolMOSTM transistor - Part I: Device physics," IEEE Trans. Electron Devices, May 2002, Vol.49, No.5, pp.916-922.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.5 , pp. 916-922
    • Daniel, B.J.1    Parikh, C.D.2    Patil, M.B.3
  • 16
    • 5544280214 scopus 로고    scopus 로고
    • Matched pair of CoolMOS transistor with SiC-schottky diode - Advantages in application
    • Sept.-Oct.
    • L. Lorenz, G. Deboy, I. Zverev, "Matched pair of CoolMOS transistor with SiC-Schottky diode - advantages in application," IEEE Trans. Ind. Appl., vol.40, no.5, Sept.-Oct. 2004, pp.1265-1272.
    • (2004) IEEE Trans. Ind. Appl. , vol.40 , Issue.5 , pp. 1265-1272
    • Lorenz, L.1    Deboy, G.2    Zverev, I.3
  • 18
    • 33644907456 scopus 로고    scopus 로고
    • Analytical loss model of power MOSFET
    • March
    • R. Yuancheng, Ming Xu, Jinghai Zhou, F.C. Lee, "Analytical loss model of power MOSFET," IEEE Trans. Power Electron., vol.21, no.2, March 2006, pp.310-319.
    • (2006) IEEE Trans. Power Electron. , vol.21 , Issue.2 , pp. 310-319
    • Yuancheng, R.1    Xu, M.2    Zhou, J.3    Lee, F.C.4
  • 19
    • 51049112915 scopus 로고    scopus 로고
    • Study on advanced power device performance under real circuit conditions with an exact power loss simulator
    • 2-5 Sept.
    • K. Takao, Y. Hayashi, S. Harada, H. Ohashi, "Study on advanced power device performance under real circuit conditions with an exact power loss simulator," European Conf. on Power Electr. and Appl., 2-5 Sept. 2007, pp.1-10.
    • (2007) European Conf. on Power Electr. and Appl. , pp. 1-10
    • Takao, K.1    Hayashi, Y.2    Harada, S.3    Ohashi, H.4
  • 20
    • 1542328004 scopus 로고    scopus 로고
    • Accurate measurement of the switching losses of ultra high switching speed CoolMOS power transistor/SiC diode combination employed in unity power factor PWM rectifier systems
    • Nuremberg, May 14 - 16
    • G. Laimer, J.W., Kolar, "Accurate Measurement of the Switching Losses of Ultra High Switching Speed CoolMOS Power Transistor / SiC Diode Combination Employed in Unity Power Factor PWM Rectifier Systems," Proc. PCIM 2002, Nuremberg, May 14 - 16, pp.71-78.
    • Proc. PCIM 2002 , pp. 71-78
    • Laimer, G.1    Kolar, J.W.2
  • 21
    • 33745860398 scopus 로고    scopus 로고
    • Study on intrinsic loss of unipola power device due to main junction capacitance
    • K. Adachi, K. Takao, Y. Hayashi and H. Ohashi, "Study on Intrinsic Loss of Unipola Power Device due to Main Junction Capacitance," IEEJ Trans. IA, 2006, Vol. 126, No. 7, pp.941-945.
    • (2006) IEEJ Trans. IA , vol.126 , Issue.7 , pp. 941-945
    • Adachi, K.1    Takao, K.2    Hayashi, Y.3    Ohashi, H.4
  • 22
    • 65949105065 scopus 로고    scopus 로고
    • A semiconductor area based assessment of AC motor drive converter topologies
    • 15-19 Feb.
    • T. Friedli, J.W. Kolar, "A Semiconductor Area Based Assessment of AC Motor Drive Converter Topologies," Proc. of the APEC 2009, 15-19 Feb. 2009, pp.336-342.
    • (2009) Proc. of the APEC 2009 , pp. 336-342
    • Friedli, T.1    Kolar, J.W.2
  • 23
    • 0036444446 scopus 로고    scopus 로고
    • Wide input voltage range high power density high efficiency 10kW three-phase three-level unity power factor PWM rectifier
    • June 23 - 27
    • J. Miniböck, J.W. Kolar, "Wide Input Voltage Range High Power Density High Efficiency 10kW Three-Phase Three-Level Unity Power Factor PWM Rectifier," Proc. of the PESC 2002 June 23 - 27, 2002, Vol. 4, pp.1642-1648.
    • (2002) Proc. of the PESC 2002 , vol.4 , pp. 1642-1648
    • Miniböck, J.1    Kolar, J.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.