Compensation devices versus power MOS and high speed IGBT - A device physics based guideline for the application

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 61-68

  Deboy, Gerald ^a   Pürschel, Marco ^a   Schmitt, Markus ^b   Willmeroth, Armin ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PHYSICS; HIGH SPEED;

EID: 84907568068     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195205     Document Type: Conference Paper

References (8)

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2. L. Lorenz, G. Deboy, A. Knapp and M. März, "CoolMOS-a new milestone in high voltage power MOS", Proc. ISPSD 99, pp. 3-10, Toronto 1999
3. T. Fujihira, "Theory of Semiconductor Superjunction Devices", Jpn. J. Appl. Phys., Vol. 36, pp. 6254-6262, 1997.
4. P. M. Shenoy, G. Dolny, "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET", Proc. ISPSD 99, pp. 99-102, Toronto 1999.
5. T. Nitta, T. Minato, M. Yano, A. Uenisi, M. Harada and S. Hine, Experimental results and simulation analysis of 250 V super trench power MOSFET", Proc. ISPSD 2000, pp. 77-80, Toulouse 2000.
6. G. Deboy, D. Ahlers, E. Griebl and L. Lorenz, "CoolMOS C3-a further step towards the ideal switch", Proc. PCIM 2001, pc43 (electronic version), Nürnberg 2001.
7. A. W. Ludikhuize, "A review of the RESURF technology", Proc. ISPSD 2000, pp. 11-18, Toulouse 2000.
8. T. Laska, M. Münzer, F. Pfirsch, C. Schaeffer and T. Schmidt, "The field stop IGBT-a new device concept with a great improvement potential", Proc. ISPSD2000, pp. 355-358, Toulouse 2000.