Modeling of the CoolMOS™ transistor - Part I: Device physics

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 916-922

  Daniel, Bobby J ^b   Parikh, Chetan D ^a,b   Patil, Mahesh B ^a,b  

^a IEEE

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Device simulation; Power MOSFET; Superjunction

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; JUNCTION GATE FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE MODELS;

DRAIN CURRENT; SUPERJUNCTION;

MOSFET DEVICES;

EID: 0036564370     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998603     Document Type: Article

References (10)

1. Coolmos™-A new milestone in high voltage power MOS
2. A new generation of high voltage MOSFETs breaks the limits of silicon
3. Theory of a novel voltage sustaining layer for power devices
4. Theory of semiconductor superjunction devices
5. Simulated superior performance of semiconductor superjunction devices
6. Analysis of the effect of charge imbalance on stat ic and dynamic characteristics of the super-junction MOSFET
7. Predicted electrical characteristics of 4500 V super multi-resurf MOSFETs
8. Study of the quasisaturation effect in VDMOST transistors
9. Modeling of the CoolMOS™ transistor, part II: DC model and parameter extraction