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Volumn , Issue , 2009, Pages

Superjunction MOS devices - From device development towards system optimization

Author keywords

Efficiency; EMC EMI; Power management; Super Junction Devices (CoolMOS); Switched mode power supply

Indexed keywords

COOLMOS; EMC/EMI; POWER MANAGEMENTS; SUPER JUNCTIONS; SWITCHED MODE POWER SUPPLIES;

EID: 72949109559     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (10)

References (14)
  • 2
    • 0031251517 scopus 로고    scopus 로고
    • Theory of Semiconductor Superjunction Devices
    • T. Fujihira: Theory of Semiconductor Superjunction Devices, Jpn.J.Appl.Phys., Vol. 36, 1997, pp 6254-6262
    • (1997) Jpn.J.Appl.Phys , vol.36 , pp. 6254-6262
    • Fujihira, T.1
  • 4
    • 0032598936 scopus 로고    scopus 로고
    • Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
    • Toronto, pp
    • P.M. Shenoy, G. Dolny: Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET, Proc. of ISPSD 1999, Toronto, pp 99-102
    • (1999) Proc. of ISPSD , pp. 99-102
    • Shenoy, P.M.1    Dolny, G.2
  • 5
    • 40749145770 scopus 로고    scopus 로고
    • The effect of charge imbalance on Superjunction Power Devices: An exact solution
    • March
    • E. Napoli, H. Wang, F. Udrea: The effect of charge imbalance on Superjunction Power Devices: An exact solution, IEEE Electron Device Letters, March 2008, vol. 29, no.3, p. 249
    • (2008) IEEE Electron Device Letters , vol.29 , Issue.3 , pp. 249
    • Napoli, E.1    Wang, H.2    Udrea, F.3
  • 10
    • 72949108769 scopus 로고    scopus 로고
    • H. Kapels, M. Schmitt, U. Kirchner, G. Aloise, F. Bjoerk: New 900 V Voltage Class for Super Junction Devices - A New Horizon for SMPS and renewable energy applications, PCIM 2008, Nuremberg
    • H. Kapels, M. Schmitt, U. Kirchner, G. Aloise, F. Bjoerk: New 900 V Voltage Class for Super Junction Devices - A New Horizon for SMPS and renewable energy applications, PCIM 2008, Nuremberg
  • 12
    • 51549116067 scopus 로고    scopus 로고
    • Super Junction MOSFETs above 600V with Parallel Gate Structure Fabricated by Deep Trench Etching and Epitaxial Growth
    • Orlando, pp
    • A. Sugi, M. Takei, K. Takahashi, A. Yajima, H. Tomizawa, H. Nakazawa: Super Junction MOSFETs above 600V with Parallel Gate Structure Fabricated by Deep Trench Etching and Epitaxial Growth, Proc. of ISPSD 2008, Orlando, pp 165-168
    • (2008) Proc. of ISPSD , pp. 165-168
    • Sugi, A.1    Takei, M.2    Takahashi, K.3    Yajima, A.4    Tomizawa, H.5    Nakazawa, H.6
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.