Study on intrinsic loss of unipola power device due to main junction capacitance

IEEJ Transactions on Industry Applications

Volumn 126, Issue 7, 2006, Pages 941-945

  Adachi, Kazuhiro ^a,c,d   Takao, Kazuto ^a   Hayashi, Yusuke ^a   Ohashi, Hiromichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c AIST ^*  (Japan)

^d IEEE   (Japan)

Author keywords

Device applications; High frequency power converters; Power loss; Power semiconductor devices; Silicon; Silicon carbide device; TCAD device simulation

Indexed keywords

DEVICE APPLICATIONS; HIGH FREQUENCY POWER CONVERTERS; POWER SEMICONDUCTOR DEVICES; TCAD DEVICE SIMULATION;

CHOPPERS (CIRCUITS); ELECTRIC LOSSES; ENERGY GAP; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDE;

POWER CONVERTERS;

EID: 33745860398     PISSN: 09136339     EISSN: 13488163     Source Type: Journal    
DOI: 10.1541/ieejias.126.941     Document Type: Article

References (7)

1. H. Ohashi: "Power Electronics Innovation with Next Generation Advanced Power Devices", Proc. the 25th IEEE Int. Telecommun Energy Conference, Yokohama, Japan (2003-10)
2. K. Takao, K. Adachi, T. Mogi, and H. Ohashi: "Novel Evaluation Approach for an Ultra High Speed Low Loss Power Converter", Proc. EPE-PEMC, Latvia (2004)
3. K. Adachi, H. Ohashi, and K. Arai: "The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices", Mat. Sci. For., Vot.457-460, pp.1233-1236 (2004)
4. B.J. Baliga: Power Semiconductor devices, PWS publishing company, pp.388-395 (1995)
5. M. Tsukuda, I. Omura, T. Demon, W. Saito, and T. Ogura: "High-voltage Power MOSFETs under a few MHz Switching", Proc. Insl. of Elec. Eng. of Japan, Conf. of Ind. Appl. (2003)
6. International Rectifier, datasheet for IRF830A, IRF840A and IRFB1IN50A
7. Nihon Synopsys Co., Ltd. TCAD device simulation, DESSIS