Gate-controlled donor activation in silicon nanowires

Nano Letters

Volumn 10, Issue 9, 2010, Pages 3791-3795

  Yan, Binghai ^a,d   Frauenheim, Thomas ^a   Gali, Ádám ^b,c  

^a UNIVERSITY OF BREMEN   (Germany)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^c INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^d STANFORD UNIVERSITY   (United States)

Author keywords

Doping; field effect transistor; hyperfine interaction; impurity ionization; solid state qubit

Indexed keywords

AB INITIO CALCULATIONS; BULK COUNTERPART; CARRIER DENSITY; CROSS SECTION; DONOR ACTIVATION; DOPING; FREE CARRIER DENSITY; GATE VOLTAGES; HYPERFINE INTERACTIONS; IONIZATION ENERGIES; LOW DIELECTRIC CONSTANTS; NANOWIRE DEVICES; PHOSPHORUS-DOPED; SEMICONDUCTOR NANOWIRE; SILICON NANOWIRES;

CARRIER CONCENTRATION; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; IONIZATION POTENTIAL; NANOWIRES; PARTICLE DETECTORS; PHOSPHORUS;

DENSITY FUNCTIONAL THEORY;

EID: 77956429160     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1027292     Document Type: Article

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