Existence of electronic excitation enhanced crystallization in gesb amorphous thin films upon ultrashort laser pulse irradiation

Physical Review Letters

Volumn 76, Issue 14, 1996, Pages 2519-2522

  Solis, J ^a   Afonso, C N ^a   Hyde, S C W ^b   Barry, N P ^b   French, P M W ^b  

^a INSTITUTO DE ÓPTICA   (Spain)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRONS; HELIUM NEON LASERS; LASER PULSES; LIGHT REFLECTION; PHASE TRANSITIONS; SEMICONDUCTING GERMANIUM COMPOUNDS; SURFACE MEASUREMENT; THERMAL DIFFUSION; THIN FILMS;

CARRIER LATTICE THERMALIZATION; ELECTRONIC EXCITATION; GERMANIUM ANTIMONIDE; REFLECTIVITY; SURFACE AREA; ULTRASHORT LASER PULSES;

CRYSTALLIZATION;

EID: 0030126219     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.2519     Document Type: Article

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