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Volumn 81, Issue 23, 2010, Pages

Quantum confinement effects in hydrogen-intercalated Ga1-x Asx Nx -GaAs1-x Nx:H planar heterostructures investigated by photoluminescence spectroscopy

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EID: 77956312247     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235327     Document Type: Article
Times cited : (7)

References (24)
  • 5
    • 85014169645 scopus 로고    scopus 로고
    • edited by M. Henini (Elsevier, Oxford, UK
    • Dilute Nitride Semiconductors, edited by, M. Henini, (Elsevier, Oxford, UK, 2005).
    • (2005) Dilute Nitride Semiconductors
  • 19
    • 0040924200 scopus 로고
    • It may be worth noticing that these calculations qualitatively reproduce also the results obtained in GaAs in two dimension by, 10.1147/rd.93.0179
    • It may be worth noticing that these calculations qualitatively reproduce also the results obtained in GaAs in two dimension by D. P. Kennedy and R. R. O'Brien, IBM J. Res. Dev. 9, 179 (1965). 10.1147/rd.93.0179
    • (1965) IBM J. Res. Dev. , vol.9 , pp. 179
    • Kennedy, D.P.1    O'Brien, R.R.2
  • 22
    • 77956302155 scopus 로고    scopus 로고
    • note
    • As reported in Ref., the extent of the energy shift induced by strain saturates for w < 500 nm. Thus, in the w = 80 nm wire it can be safely assumed equal to 5 meV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.