Reliability of deep-UV light-emitting diodes

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 248-254

  Meneghini, Matteo ^a   Pavesi, Maura ^b   Trivellin, Nicola ^a   Gaska, Remis ^c   Zanoni, Enrico ^a   Meneghesso, Gaudenzio ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; ACTIVE REGIONS; ALGAN; CURRENT LEVELS; DEEP LEVELS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DEEP-UV; DEFECT STATE; NONRADIATIVE RECOMBINATION RATES; OUTPUT POWER; RADIATIVE TRANSITIONS; RECOMBINATION MECHANISMS;

CURRENT DENSITY; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; QUALITY ASSURANCE; ULTRAVIOLET INSTRUMENTS; ULTRAVIOLET RADIATION;

RELIABILITY ANALYSIS;

EID: 64249156492     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.919570     Document Type: Article

References (16)

1. J. Zhang, Y. Bilenko, X. Hu, A. Lunev, A. Sattu, J. Deng, M. Shatalov, W. Sun, J. Yang, and R. Gaska, "AlGaN based deep UV LEDs with emission at 230-270 nm," in Proc. ICNS, Las Vegas, NV, 2007.
2. Y. Bilenko, A. Lunev, X. Hu, J. Deng, T. M. Katona, J. Zhang, R. Gaska, M. S. Shur, W. Sun, V. Adivarahan, M. Shatalov, and A. Khan, "10 milliwatt pulse operation of 265 nm AlGaN light emitting diodes," Jpn. J. Appl. Phys. 2, Lett., vol. 44, no. 3, pp. L98-L100, Jan. 2005.
3. K. X. Chen, Y. A. Xi, F. W. Mont, J. K. Kim, E. F. Schubert, W. Liu, X. Li, and J. A. Smart, "Recombination dynamics in ultraviolet lightemitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions," J. Appl. Phys., vol. 101, no. 11, pp. 113 102-1- 113 102-5, Jun. 2007.
4. A. A. Allerman, M. H. Crawford, A. J. Fischer, K. H. A. Bogart, S. R. Lee, D. M. Follstaedt, P. P. Provencio, and D. D. Koleske, "Growth and design of deep-UV (240-290 nm) light emitting diodes using AlGaN alloys," J. Cryst. Growth, vol. 272, no. 1-4, pp. 227-241, Dec. 2004.
5. Z. Gong, M. Gaevski, V. Adivarahan, W. Sun, M. Shatalov, and M. Asif Khan, "Optical power degradation mechanisms in AlGaN based 280 nm deep ultraviolet light-emitting diodes on sapphire," Appl. Phys. Lett., vol. 88, no. 12, pp. 121 106-1-121 106-3, Mar. 2006.
6. J. P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, M. Shur, R. Gaska, M. Shatalov, J. W. Yang, and M. A. Khan, "AlGaN-based 280 nm lightemitting diodes with continuous-wave power exceeding 1 mWat 25 mA," Appl. Phys. Lett., vol. 85, no. 23, pp. 5532-5534, Dec. 2004.
7. P. N. Grillot, M. R. Krames, H. Zhao, and S. H. Teoh, "Sixty thousand hour light output reliability of AlGaInP light emitting diodes," IEEE Trans. Device Mater. Rel., vol. 6, no. 4, pp. 564-574, Dec. 2006.
8. X. A. Cao and S. F. LeBoeuf, "Current and temperature dependent characteristics of deep-ultraviolet light-emitting diodes," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3414-3417, Dec. 2007.
9. O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, "Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes," Appl. Phys. Lett., vol. 79, no. 18, pp. 2895-2897, Oct. 2001.
10. C. R. Moon, B. D. Choe, S. D. Kwon, H. K. Shin, and H. J. Lim, "Electron distribution and capacitance-voltage characteristics of n-doped quantum wells," J. Appl. Phys., vol. 84, no. 5, pp. 2673-2683, Sep. 1998.
11. C. R. Moon and H. J. Lim, "Influence of quantum well structural parameters on capacitance-voltage characteristics," Appl. Phys. Lett., vol. 74, no. 20, pp. 2987-2989, May 1999.
12. A. Polyakov et al., "Enhanced tunneling in GaN/InGaN multi-quantumwell heterojunction diodes after short-term injection annealing," J. Appl. Phys., vol. 91, no. 8, pp. 5203-5207, Apr. 2002.
13. M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S.Wu, G. Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, and R. Gaska, "Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm," Appl. Phys. Lett., vol. 82, no. 2, pp. 167-169, Jan. 2003.
14. Y. Xia, E. Williams, Y. Park, I. Yilmaz, J. Shah, E. Schubert, and C. Wetzel, "Discrete steps in the capacitance-voltage characteristics of GaInN/GaN light emitting diode structures," in Proc. Mater. Res. Soc. Symp., 2005, vol. 831, pp. E3.38.1-E3.38.5.
15. F. Rossi et al., "Influence of short-term low-current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes," J. Appl. Phys., vol. 99, no. 5, pp. 053 104-1-053 104-7, Mar. 2006.
16. T. Yanagisawa and T. Kojima, "Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations," Microelectron. Reliab., vol. 43, no. 6, pp. 977-980, Jun. 2003.