Degradation mechanisms beyond device self-heating in deep ultraviolet light emitting diodes

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 94-97

  Moe, Craig G ^a   Reed, Meredith L ^a   Garrett, Gregory A ^a   Metcalfe, Grace D ^a   Alexander, Troy ^a   Shen, Hongen ^a   Wraback, Michael ^a   Lunev, Alex ^b   Bilenko, Yuriy ^b   Hu, Xuhong ^b   Sattu, Ajay ^b   Deng, Jianyu ^b   Shatalov, Maxim ^b   Gaska, Remis ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BURN-IN; CONSTANT CURRENT; CURRENT INJECTIONS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DEGRADATION MECHANISM; DEVICE ACTIVE REGION; ELECTRO-OPTIC MEASUREMENTS; JUNCTION TEMPERATURES; LIFETIME MEASUREMENTS; MICRO RAMAN SPECTROSCOPY; OUTPUT POWER; P-N JUNCTION; SELF-HEATING; TIME-RESOLVED; UV LEDS;

HEATING; LIGHT EMITTING DIODES; POINT DEFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET RADIATION;

DEGRADATION;

EID: 70449094714     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173230     Document Type: Conference Paper

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