Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 2, 2008, Pages 364-371

  Pfeiffer, Ullrich R ^a,b,c   Mishra, Chinmaya ^a,b,d   Rassel, Robert M ^e   Pinkett, Shawn ^e   Reynolds, Scott K ^b  

^a IEEE

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF SIEGEN   (Germany)

^d QUALCOMM INC   (United States)

^e IBM   (United States)

Author keywords

Frequency doubler; Millimeter waves; Power generation; Schottky barrier diodes (SBDs); Silicon germanium (SiGe); Subharmonic mixer (SHM); Terahertz

Indexed keywords

BICMOS TECHNOLOGY; MILLIMETER WAVES; MIXER CIRCUITS; POWER GENERATION; SILICON;

COMPRESSION POINT; FREQUENCY DOUBLER; ON-CHIP MATCHING; SUBHARMONIC MIXER (SHM);

SCHOTTKY BARRIER DIODES;

EID: 38949130099     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2007.914656     Document Type: Article

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