Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 59-60

  Lu, Bin ^a   Saadat, Omair I ^a   Piner, Edwin L ^b   Palacios, Tomas ^a  

^a USA   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CF4 PLASMAS; DIGITAL ELECTRONIC CIRCUITS; ENHANCEMENT-MODE; GATE METALLIZATION; GATE RECESS; GATE REGION; HIGH LINEARITY; HYDROGEN PLASMA TREATMENTS; MODE OPERATION;

DIGITAL CIRCUITS; ELECTRON MOBILITY; ELECTRON TUBES; GALLIUM NITRIDE; PLASMA APPLICATIONS; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 76549084573     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354885     Document Type: Conference Paper

References (2)

1. W.B. Lanford, T. Tanaka, Y. Otoki and I. Adesida, Elect. Lett., vol. 41, No. 7, March (2005).
2. Y. Cai, Yugang Zhou, Kevin J. Chen and Kei May Lau, IEEE Elect. Dev. Lett, 26, 7 (2005).