Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 281-282

  Miyake, Hiroki ^a   Kimoto, Tsunenobu ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; BAND GAPS; COMMON-EMITTER MODES; CURRENT GAINS; DEVICE STRUCTURES; GROUP III NITRIDES; GROUP-IV SEMICONDUCTORS; HETEROEPITAXIAL GROWTH; HIGH BREAKDOWN VOLTAGE; HIGH-POWER SWITCHING DEVICE; ON-RESISTANCE; SHORT-PERIOD SUPERLATTICES; SIC BJT; SIC DEVICES; WIDE GAP;

BIPOLAR TRANSISTORS; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TUNNEL DIODES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 76549085116     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354933     Document Type: Conference Paper

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