Improved current gain in GaN/SiC Heterojunction Bipolar Transistors by insertion of ultra-thin AlN layer at emitter-junction

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 979-982

  Miyake, Hiroki ^a   Kimoto, Tsunenobu ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AlN; Current gain; Gan; HBT; Heterojunction; MBE; SiC

Indexed keywords

ALUMINUM NITRIDE; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; EFFICIENCY; ELECTRIC RECTIFIERS; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE;

CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER INJECTION; CONDUCTION BAND OFFSET; CURRENT GAINS; EMITTER JUNCTIONS; GAN/SIC HETEROJUNCTION; INJECTION EFFICIENCY; INSERTION LAYERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 76549137249     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.979     Document Type: Conference Paper

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