Impact of acceptor concentration on electronic properties of n+-GaN/p+-SiC heterojunction for gan/sic heterojunction bipolar transistor

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 1039-1042

  Amari, Koichi ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

EL; Emitter efficiency; HBT; Heterojunction; Injection; MBE

Indexed keywords

ELECTRONIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INJECTION (OIL WELLS); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; SODIUM;

ACCEPTOR CONCENTRATIONS; HETEROJUNCTION DIODES; POLYTYPES; SIC EPILAYERS;

SILICON CARBIDE;

EID: 38449085322     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.1039     Document Type: Conference Paper

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