Investigation of n-GaN/p-SiC/n-SiC heterostructures

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 239-241

  Lebedev, A A ^a   Ledyaev, O Yu ^a   Strel'chuk, A M ^a   Kuznetsov, A N ^a   Nikolaev, A E ^a   Zubrilov, A S ^a   Volkova, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

A3. Hydride vapor phase epitaxy. A3. Solid phase epitaxy. B2. Semiconducting materials. B3. Heterojunction semiconductor devices

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON CARBIDE;

HETEROJUNCTION SEMICONDUCTOR DEVICES; HYDRIDE VAPOR PHASE EPITAXY; SOLID PHASE EPITAXY;

HETEROJUNCTIONS;

EID: 33847253337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.027     Document Type: Article

References (3)

1. Ledyaev O.Yu., Lebedev A.A., Strel'chuk A.M., Kuznetsov A.N., Nikolaev A.E., Zubrilov A.S., and Volkova A.A. Electrical properties of n-GaN/p-SiC heterojunction. Semiconductors 39 (2005) 1452
2. Torvik J.T., Leksono M., Pankove J.I., Zeghbroeck B.V., Ng H.M., and Moustakas T.D. Appl. Phys. Lett. 72 (1998) 1371
3. J.I. Pankove, S.S. Chang, H.C. Lee, R. Molnar, T.D. Moustakas, B. van Zeghbroeck, in: Proceedings of IEDM, San Francisco, CA, USA, 1994, p. 389.