A unified hopping model for subthreshold current of phase-change memories in amorphous state

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1023-1025

  Calderoni, Alessandro ^a   Ferro, Massimo ^b   Ielmini, Daniele ^b   Fantini, Paolo ^a  

^a Numonyx   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Amorphous chalcogenide; phase change memory (PCM); PooleFrenkel (PF) conduction; transport modeling

Indexed keywords

AMORPHOUS CHALCOGENIDE; AMORPHOUS STATE; ANALYTICAL MODEL; BARRIER LOWERING; CHARGED STATE; CONDUCTION PROCESS; CURRENT CHARACTERISTIC; EXPERIMENTAL DATA; HIGH-FIELD; HIGH-RESISTANCE STATE; HOPPING MODELS; I - V CURVE; NUMERICAL SIMULATION; PHASE CHANGES; PHYSICALLY BASED; POOLE-FRENKEL; SUB-THRESHOLD CURRENT; TEMPERATURE DEPENDENT; TRANSPORT MODELING; TRANSPORT MODELS; VOLTAGE DEPENDENCE;

ACTIVATION ENERGY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; MODELS;

PHASE CHANGE MEMORY;

EID: 77956172917     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052016     Document Type: Article

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